Giant coercivity enhancement in a room-temperature van der Waals magnet through substitutional metal-doping

被引:5
|
作者
Ahn, Hyo-Bin [1 ]
Jung, Soon-Gil [2 ]
Lim, Hyungjong [3 ]
Kim, Kwangsu [4 ,5 ]
Kim, Sanghoon [4 ]
Park, Tae-Eon [5 ]
Park, Tuson [6 ,7 ]
Lee, Changgu [1 ,3 ]
机构
[1] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Suwon 16419, South Korea
[2] Sunchon Natl Univ, Dept Phys Educ, Sunchon 57922, South Korea
[3] Sungkyunkwan Univ, Sch Mech Engn, Suwon 16419, South Korea
[4] Univ Ulsan, Dept Phys, Ulsan 44619, South Korea
[5] Korea Inst Sci & Technol, Ctr Spintron, Seoul 02792, South Korea
[6] Sungkyunkwan Univ, Ctr Quantum Mat & Superconduct CQMS, Suwon 16419, South Korea
[7] Sungkyunkwan Univ, Dept Phys, Suwon 16419, South Korea
基金
新加坡国家研究基金会;
关键词
Coercive force - Frequency modulation - Germanium compounds - Magnetic anisotropy - Nickel - Semiconductor doping - Spin glass;
D O I
10.1039/d3nr00681f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
FexGeTe2 (x = 3, 4, and 5) systems, two-dimensional (2D) van der Waals (vdW) ferromagnetic (FM) metals with high Curie temperatures (T-C), have been intensively studied to realize all-2D spintronic devices. Recently, an intrinsic FM material Fe3GaTe2 with high T-C (350-380 K) has been reported. As substitutional doping changes the magnetic properties of vdW magnets, it can be a powerful means for engineering the properties of magnetic materials. Here, the coercive field (H-c) is substantially enhanced by substituting Ni for Fe in (Fe1-xNix)(3)GaTe2 crystals. The introduction of a Ni dopant with x = 0.03 can enhance the value of H-c up to & SIM;200% while maintaining the FM state at room temperature. As the doping level increases, T-C decreases, whereas H-c increases up to 7 kOe at x = 0.12, which is the highest H-c reported so far. The FM characteristic is almost suppressed at x = 0.68 and a spin glass state appears. The enhancement of H-c resulting from Ni doping can be attributed to domain pinning induced by substitutional Ni atoms, as evidenced by the decrease in magnetic anisotropy energy in the crystals upon Ni doping. Our findings provide a highly effective way to control the H-c of the 2D vdW FM metal Fe3GaTe2 for the realization of Fe3GaTe2 based room-temperature operating spintronic devices.
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页码:11290 / 11298
页数:9
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