Mechanism analysis of CuInS2 and Cu(In,Ga)S2 growth via KCN- and H2S-free process and solar-cell application

被引：0

作者：

Suzuki, Yota ^{[1
]}

Egyna, Dwinanri ^{[1
]}

Shibata, Tomoki ^{[1
]}

Nishimura, Takahito ^{[1
]}

Yamada, Akira ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro, Tokyo 1528550, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2023年 / 62卷 / SK期

关键词：

thin-film solar cell; chalcopyrite; Cu(In; Ga)S-2; KCN and H2S free process; sulfur powder source; Cu-poor precursor; growth mechanism; REAL-TIME INVESTIGATIONS; THIN-FILMS; SULFURIZATION; SITU;

D O I：

10.35848/1347-4065/accb63

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this article, CuInS2 (CIS) and Cu(In,Ga)S-2 (CIGS) absorbers are prepared via sulfurization by a sulfur powder source for co-evaporated Cu-In(-Ga) metal precursors without toxic KCN and H2S. The CIS and CIGS growth mechanism during sulfurization and their application to solar cells are discussed. X-ray diffraction and Raman spectroscopy analyses indicate that CuS and (In,Ga)(2)S-3 exist at the frontside and the backside, respectively, in the CIGS films at the temperature between 250 degrees C and 350 degrees C. Then, these intermediate phases react at 400 degrees C or higher forming CIGS. Finally, CIS and CIGS solar cells with efficiencies of 3.7% and 7.2% are achieved, utilizing an optimum temperature of 600 degrees C.

引用

页数：5

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