GaN/Ga2O3 avalanche photodiodes with separate absorption and multiplication structure

被引:2
|
作者
Wang, Rui [1 ,2 ]
Shao, Zhenguang [3 ]
Xu, Kaicheng [1 ,2 ]
Zhi, Ting [1 ,2 ]
Gao, Chunrong [4 ]
Xue, Junjun [1 ,2 ]
Wang, Jin [1 ,2 ]
机构
[1] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Coll Flexible Elect Future Technol, Nanjing 210023, Peoples R China
[3] Changshu Inst Technol, Sch Elect & Informat Engn, Suzhou 215000, Peoples R China
[4] B Soft Ltd, Hangzhou 310052, Peoples R China
基金
中国国家自然科学基金;
关键词
PHOTODETECTOR;
D O I
10.1364/OL.505699
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
This article proposes a new, to the best of our knowledge, separate absorption and multiplication (SAM) APD based on GaN/beta-Ga2O3 heterojunction with high gains. The proposed APD achieved a high gain of 1.93 x 10(4). We further optimized the electric field distribution by simulating different doping concentrations and thicknesses of the transition region, resulting in the higher avalanche gain of the device. Furthermore, we designed a GaN/beta-Ga2O3 heterojunction instead of the single Ga2O3 homogeneous layer as the multiplication region. Owing to the higher hole ionization coefficient, the device offers up to a 120% improvement in avalanche gain reach to 4.24 x 10(4). We subsequently clearly elaborated on the working principle and gain mechanism of GaN/beta-Ga2O3 SAM APD. The proposed structure is anticipated to provide significant guidance for ultraweak ultraviolet light detection.
引用
收藏
页码:5651 / 5654
页数:4
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