Voltage-controlled magnetic anisotropy based physical unclonable function

被引:4
|
作者
Meo, Andrea [1 ]
Garzon, Esteban [2 ]
De Rose, Raffaele [2 ]
Finocchio, Giovanni [3 ]
Lanuzza, Marco [2 ]
Carpentieri, Mario [1 ]
机构
[1] Politecn Bari, Dept Elect & Informat Engn, I-70125 Bari, Italy
[2] Univ Calabria, Dept Comp Engn Modeling Elect & Syst, I-87036 Arcavacata Di Rende, Italy
[3] Univ Messina, Dept Math & Comp Sci, Phys Sci & Earth Sci, I-98166 Messina, Italy
关键词
FLUCTUATIONS; SIMULATION; DEVICES;
D O I
10.1063/5.0166164
中图分类号
O59 [应用物理学];
学科分类号
摘要
We design a spintronic physical unclonable function (PUF) based on sub-100 nm voltage-controlled magnetic anisotropy hybrid magnetic tunnel junctions (VCMA-MTJs). This complementary metal-oxide-semiconductor VCMA-MTJ (CMOS/VCMA-MTJ) PUF architecture was evaluated by combining micromagnetic simulations, Verilog-A modeling, and circuit-level simulations. The PUF architecture, comprising four 16 rows x 16 columns arrays, demonstrates effective read and write operations using conventional voltage sensing that are orders of magnitudes lower than previous spintronic-based PUFs. This study proves the potential of the proposed solution in security applications based on hardware authentication.
引用
收藏
页数:6
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