共 50 条
- [31] Electron and Hole Transfer in Anion-Bound Chemically Amplified Resists Used in Extreme Ultraviolet Lithography EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY V, 2014, 9048
- [35] Relation between spatial resolution and reaction mechanism of chemically amplified resists for electron beam lithography JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06): : 3149 - 3152
- [36] Effects of rate constant for deprotection reaction on latent image formation in chemically amplified EUV resists MICROPROCESSES AND NANOTECHNOLOGY 2007, DIGEST OF PAPERS, 2007, : 438 - +
- [37] Dissolution Kinetics and Deprotection Reaction in Chemically Amplified Resists upon Exposure to Extreme Ultraviolet Radiation ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVI, 2009, 7273
- [38] Examination of a simplified reaction-diffusion model for post exposure bake of chemically amplified resists ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2, 2001, 4345 : 1022 - 1036