Effect of High Temperature on the Performanceof AlGaN/GaN T-Gate High-Electron MobilityTransistors With∼140-nm Gate Length

被引：7

作者：

Islam, Ahmad E. ^{[1
]}

Sepelak, Nicholas P. ^{[2
]}

Miesle, Adam T. ^{[2
]}

Lee, Hanwool ^{[3
]}

Snure, Michael ^{[1
]}

Nikodemski, Stefan ^{[2
]}

Walker, Dennis E. ^{[1
]}

Miller, Nicholas C. ^{[1
]}

Grupen, Matt ^{[1
]}

Leedy, Kevin D. ^{[1
]}

Liddy, Kyle J. ^{[1
]}

Crespo, Antonio ^{[1
]}

Hughes, Gary R. ^{[1
]}

Zhu, Wenjuan ^{[3
]}

Poling, Brian ^{[1
]}

Tetlak, Stephen ^{[1
]}

Chabak, Kelson D. ^{[1
]}

Green, Andrew J. ^{[1
]}

机构：

[1] Air Force Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA

[2] KBR Inc, Beavercreek, OH 45431 USA

[3] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 03期

关键词：

Logic gates; Temperature measurement; MODFETs; HEMTs; Performance evaluation; Metals; Wide band gap semiconductors; AlGaN/GaN high electron mobility transistors (HEMTs); degradation; high temperature (HT) electronics; leakage; time-dependence; transconductance; MOBILITY TRANSISTORS; HEMTS; GAN;

D O I：

10.1109/TED.2024.3353694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High temperature (HT) electronics applica-tions will require the development of a broad range ofdevices made using different materials. Among thesedevices, high-electron mobility transistors (HEMTs) madewith GaN and its alloys are attractive for high-power radiofrequency (RF) applications. In this manuscript, we testedAlGaN/GaN HEMT devices having similar to 140-nm gate length atdifferent temperatures up to 500 degrees C. Devices were fab-ricated using Air Force Research Laboratory's (AFRL's)140-nmT-gate process technology. The performancedegradation measured in different devices was analyzed byconsidering changes in different device parameters and byusing appropriate device physics. Cross-sectional materi-als characterization using scanning transmission electronmicroscopy (STEM) and electron energy loss spectroscopy(EELS) was performed to understand the origin of perfor-mance degradation. This understanding will allow us todesign a sub-mu m GaN-based process technology compat-ible with HT RF applications

引用

页码：1805 / 1811

页数：7

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