Performance Evaluation of CuBi2O4-based Thin Film Solar Cells with Non-toxic Oxide Electron and Hole Transport Materials

被引：0
|
作者：
Das, Sandip [1 ]
机构：
[1] Kennesaw State Univ, Dept Elect & Comp Engn, Marietta, GA 30060 USA
来源：
SOUTHEASTCON 2023 | 2023年
关键词：
CuBi2O4; Copper Bismuth Oxide; Solar Cell; Heterojunction; Photovoltaic Device; Numerical Simulation; SCAPS-1D; EFFICIENCY;
D O I：
10.1109/SoutheastCon51012.2023.10114966
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
In this paper, we report on the design and numerical simulation results of a new thin film solar cell (TFSC) structure using an emerging CuBi2O4 photovoltaic absorber material. A low-cost, efficient device structure was realized using TiO2 as the electron transport material (ETM) replacing toxic CdS buffer layer and by introducing Cu2O as the hole transport material (HTM). The optimized device exhibited a high opencircuit voltage (Voc) of 1.346 V, a short-circuit current density (Jsc) of 22.75 mA/cm(2) with 75.49% fill factor (FF), and a respectable power conversion efficiency (PCE) of 23.11% using only 500 nm thick absorber layer.
引用
收藏
页码：744 / 748
页数：5
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