Performance Evaluation of CuBi2O4-based Thin Film Solar Cells with Non-toxic Oxide Electron and Hole Transport Materials

In this paper, we report on the design and numerical simulation results of a new thin film solar cell (TFSC) structure using an emerging CuBi2O4 photovoltaic absorber material. A low-cost, efficient device structure was realized using TiO2 as the electron transport material (ETM) replacing toxic CdS buffer layer and by introducing Cu2O as the hole transport material (HTM). The optimized device exhibited a high opencircuit voltage (Voc) of 1.346 V, a short-circuit current density (Jsc) of 22.75 mA/cm(2) with 75.49% fill factor (FF), and a respectable power conversion efficiency (PCE) of 23.11% using only 500 nm thick absorber layer.