Electric-Field Control of Perpendicularly Magnetized Ferrimagnetic Order and Giant Magnetoresistance in Multiferroic Heterostructures

被引:1
|
作者
Tang, Aihua [1 ]
Li, Chao [1 ]
Xu, Teng [2 ,3 ,4 ,5 ]
Dong, Yiqing [2 ,3 ,4 ,5 ]
Ma, Jing [1 ]
Yu, Pu [2 ,3 ,4 ,5 ]
Nan, Ce-Wen [1 ]
Lin, Yuan-hua [1 ]
Nan, Tianxiang [6 ]
Jiang, Wanjun [2 ,3 ,4 ,5 ]
Yi, Di [1 ]
机构
[1] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
[2] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[3] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[4] Tsinghua Univ, Frontier Sci Ctr Quantum Informat, Beijing 100084, Peoples R China
[5] Tsinghua Univ, Frontier Sci Ctr Quantum Informat, Beijing 100084, Peoples R China
[6] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRist, Sch Integrated Circuits, Beijing 100084, Peoples R China
基金
北京市自然科学基金; 中国国家自然科学基金;
关键词
Magnetoelectric; compensated ferrimagnet; perpendicularmagnetic anisotropy; giant magnetoresistance; VOLTAGE CONTROL; SPIN; TEMPERATURE; TORQUES;
D O I
10.1021/acs.nanolett.3c03704
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Electrical control of magnetism is highly desirable for energy-efficient spintronic applications. Realizing electric-field-driven perpendicular magnetization switching has been a long-standing goal, which, however, remains a major challenge. Here, electric-field control of perpendicularly magnetized ferrimagnetic order via strain-mediated magnetoelectric coupling is reported. We show that the gate voltages isothermally toggle the dominant magnetic sublattice of the compensated ferrimagnet FeTb at room temperature, showing high reversibility and good endurance under ambient conditions. By implementing this strategy in FeTb/Pt/Co spin valves with giant magnetoresistance (GMR), we demonstrate that the distinct high and low resistance states can be selectively controlled by the gate voltages with assisting magnetic fields. Our results provide a promising route to use ferrimagnets for developing electric-field-controlled, low-power memory and logic devices.
引用
收藏
页码:632 / 639
页数:8
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