Degradation Due to Photo-Induced Electron in Top-Gate In-Ga-Zn-O Thin Film Transistors With n- Region Under Negative Bias Stress and Light Irradiation

被引：3
|
作者：
Takeda, Yujiro [1 ]
Takahashi, Takanori [1 ]
Miyanaga, Ryoko [1 ]
Bermundo, Juan Paolo S. [1 ]
Uraoka, Yukiharu [1 ]
机构：
[1] Nara Inst Sci & Technol, Div Mat Sci, Ikoma, Nara 6300192, Japan
来源：
IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 05期
关键词：
Thermal variables control; Negative bias temperature instability; Logic gates; Stress; Electron traps; Degradation; Thin film transistors; InGaZnO; top-gate structure; Index Terms; thin film transistors (TFTs); reliability; bias stress; NBTIS; IGZO TFT;
D O I：
10.1109/LED.2023.3258960
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated the positive threshold voltage (Vth) shift with hump and on-current (Ion) reduction in top-gate In-Ga-Zn-O (IGZO) thin film transistors (TFTs) after negative gate bias of -20 V at 60?C and light irradiation stress (NBTIS). This degradation can be classified into three types of mechanism. 1. The hump at low gate voltage (Vg) is a sub-transistor effect caused by hole trapping at the IGZO/top gate insulator (TGI) interface. 2. The positive shift of Vth is caused by the trapped photo-induced electrons at the IGZO/bottom gate insulator (BGI) interface. 3. The Ion reduction occurred due to trapped photo-induced electrons at interface between n- region of IGZO/BGI interface. The electric field induced by trapped electron promotes depletion of the channel region at the IGZO/BGI and IGZO/TGI interface and n- region of IGZO/BGI interface, which corresponds to a drop in effective gate and drain voltage, respectively. Thus, the positive Vth shift and Ion reduction occurred due to trapping of photo-induced electron under NBTIS. Based on our proposed mechanism, this degradation was suppressed by the dual-gate structure.
引用
收藏
页码：765 / 768
页数：4
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