Suppression of positive gate bias temperature stress and negative gate bias illumination stress induced degradations by fluorine-passivated In-Ga-Zn-O thin-film transistors

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20154801615135
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(1) Department of Environmental Science and Engineering, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi; 782-8502, Japan; (2) Center for Nanotechnology, Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi; 782-8502, Japan; (3) Information Science and Engineering, Shenyang University of Technology, Economic and Technological Development Zone, Shenyang University of Technology, Shenyang; 110870, China | 1600年 / et al.; The Chemical Society of Japan; The Institute of Electrical Engineers of Japan; The Institute of Electronics, Information and Communication Engineers; The Institute of Image Information and Television Engineers; The Japan Society of Applied Physics卷 / Institute of Electrical and Electronics Engineers Inc., United States期
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