Suppression of positive gate bias temperature stress and negative gate bias illumination stress induced degradations by fluorine-passivated In-Ga-Zn-O thin-film transistors

被引：0
|
作者：
20154801615135
机构：
来源：
(1) Department of Environmental Science and Engineering, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi; 782-8502, Japan; (2) Center for Nanotechnology, Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi; 782-8502, Japan; (3) Information Science and Engineering, Shenyang University of Technology, Economic and Technological Development Zone, Shenyang University of Technology, Shenyang; 110870, China | 1600年 / et al.; The Chemical Society of Japan; The Institute of Electrical Engineers of Japan; The Institute of Electronics, Information and Communication Engineers; The Institute of Image Information and Television Engineers; The Japan Society of Applied Physics卷 / Institute of Electrical and Electronics Engineers Inc., United States期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
115774
引用
收藏
相关论文
共 50 条
  • [31] Investigation of an anomalous hump phenomenon in via-type amorphous In-Ga-Zn-O thin-film transistors under positive bias temperature stress
    Yang, Jianwen
    Liao, Po-Yung
    Chang, Ting-Chang
    Chen, Bo-Wei
    Huang, Hui-Chun
    Su, Wan-Ching
    Chiang, Hsiao-Cheng
    Zhang, Qun
    APPLIED PHYSICS LETTERS, 2017, 110 (14)
  • [32] Improvement in negative bias illumination stress stability of In-Ga-Zn-O thin film transistors using HfO2 gate insulators by controlling atomic-layer-deposition conditions
    Na, So-Yeong
    Kim, Yeo-Myeong
    Yoon, Da-Jeong
    Yoon, Sung-Min
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (49)
  • [33] Drain Bias Stress-Induced Degradation in Amorphous Silicon Thin Film Transistors with Negative Gate Bias
    Zhou, Dapeng
    Wang, Mingxiang
    Lu, Xiaowei
    Zhou, Jie
    2011 18TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2011,
  • [34] Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor
    Oh, Himchan
    Yoon, Sung-Min
    Ryu, Min Ki
    Hwang, Chi-Sun
    Yang, Shinhyuk
    Park, Sang-Hee Ko
    APPLIED PHYSICS LETTERS, 2011, 98 (03)
  • [35] The suppressed negative bias illumination-induced instability in In-Ga-Zn-O thin film transistors with fringe field structure
    Chen, Yu-Chun
    Chang, Ting-Chang
    Li, Hung-Wei
    Hsieh, Tien-Yu
    Chen, Te-Chih
    Wu, Chang-Pei
    Chou, Cheng-Hsu
    Chung, Wang-Cheng
    Chang, Jung-Fang
    Tai, Ya-Hsiang
    APPLIED PHYSICS LETTERS, 2012, 101 (22)
  • [36] Gate bias stress effects due to polymer gate dielectrics in organic thin-film transistors
    Ng, Tse Nga
    Daniel, Juergen H.
    Sambandan, Sanjiv
    Arias, Ana-Claudia
    Chabinyc, Michael L.
    Street, Robert A.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (04)
  • [37] Gate-Drain-Bias Stress Study of Amorphous In-Ga-Zn-O TFTs
    Wu, Chen-Yi
    Kao, Yih-Chyun
    Huang, Chun-Yao
    Lin, Chun-Nan
    Chen, Chien Hung
    IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2010, : 793 - 794
  • [38] Positive gate bias stress instability of carbon nanotube thin film transistors
    Lee, Sang Won
    Lee, Si Young
    Lim, Seong Chu
    Kwon, Young-dong
    Yoon, Joo-Sun
    Uh, Keehan
    Lee, Young Hee
    APPLIED PHYSICS LETTERS, 2012, 101 (05)
  • [39] Effect of temperature and illumination on the instability of a-Si:H thin-film transistors under AC gate bias stress
    Huang, CY
    Teng, TH
    Yang, CJ
    Tseng, CH
    Cheng, HC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (4A): : L316 - L318
  • [40] Stability of double gate amorphous In-Ga-Zn-O thin-film transistors with various top gate designs
    Chen, Te-Chih
    Kuo, Yue
    Chang, Ting-Chang
    Chen, Min-Chen
    Chen, Hua-Mao
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (12)
12345