Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing

被引：1
|
作者：
Luo, Sheng [1 ]
He, Yihan [1 ]
Cai, Baofang [1 ]
Gong, Xiao [1 ]
Liang, Gengchiau [1 ]
机构：
[1] Natl Univ Singapore NUS, Dept Elect & Comp Engn, Singapore 117583, Singapore
来源：
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年
关键词：
D O I：
10.1109/EDTM55494.2023.10103119
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Utilizing the thermal noise-induced dipole fluctuation in ferroelectric material (FE), we propose the probabilistic-bits (p-bits) based on a single ferroelectric FET (FeFET) and verify its functions in integer factorization (IF), a stochastic computing application. By accounting the thermal noise in multi-domain time-dependent Landau-Ginzburg (TDLG) equations, we investigate the impact of several key FE parameters in stochastic behaviors. We further reveal the domain dynamics' crucial role in FE stochasticity and provide unique insights for the realization of FE-based p-bits.
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页数：3
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