Investigation of radio-photoluminescence properties in Sm-doped Al4SiO8 single crystals

被引：9
|
作者：
Ichiba, Kensei [1 ]
Okada, Go [2 ]
Takebuchi, Yuma [1 ]
Kato, Takumi [1 ]
Shiratori, Daiki [1 ]
Nakauchi, Daisuke [1 ]
Kawaguchi, Noriaki [1 ]
Yanagida, Takayuki [1 ]
机构：
[1] Nara Inst Sci & Technol NAIST, Div Mat Sci, 8916-5 Takayama, Ikoma, Nara 6300192, Japan
[2] Kanazawa Inst Technol, Cocreat Res Ctr Ind Sci & Techonol CIST, 3-1 Yatsukaho, Haku San, Ishikawa 9240838, Japan
来源：
JOURNAL OF LUMINESCENCE | 2023年 / 257卷
基金：
日本学术振兴会;
关键词：
Radio; -photoluminescence; Storage phosphor; Single crystal; LUMINESCENT PROPERTIES; NANOCRYSTALLINE BAFCL/SM3+; PHOSPHORS; MULLITE; SITE; SCINTILLATOR; GENERATION; DOSIMETRY; SAMARIUM; SYSTEM;
D O I：
10.1016/j.jlumin.2023.119698
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report radio-photoluminescence (RPL) properties of Sm-doped Al4SiO8 single crystals as a new RPL material. The Sm-doped Al4SiO8 single crystals were synthesized by the floating zone method. In PL emission spectra, the emission peaks due to the 4f-4f transitions of Sm3+ ions and 2EJ-4A2 transitions of Cr3+ ions were observed before X-ray irradiation, and the ones due to the 4f-4f transitions of Sm2+ appeared as well as Sm3+ after X-ray irra-diation. The RPL dose response functions showed linear response from 1 mGy to 10 Gy for the 2.0% Sm-doped sample and from 10 mGy to 10 Gy for the others. Sm2+ ions of the new emission center completely disappeared by heat treatment at 500 degrees C for 10 min.
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页数：6
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