A Vacuum Transistor Based on Electron Emission From SiO<inline-formula> <tex-math notation="LaTeX">$_{\textit{x}}$</tex-math> </inline-formula> Tunneling Diodes

被引：0
|
作者：
He, Yidan [1 ]
Zang, Hanyang [1 ]
Yao, Jun [2 ]
Li, Zhiwei [1 ]
Zhang, Gengmin [1 ]
Wei, Xianlong [1 ]
机构：
[1] Peking Univ, Sch Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China
[2] Xiangtan Univ, Inst Adv Sensing & Informat Technol, Xiangtan 411105, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 05期
关键词：
Electron emission; Voltage; on-chip; SiOx tunneling diode; vacuum transistor;
D O I：
10.1109/TED.2024.3381575
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An ON-chip vacuum transistor based on electron emission from SiO (x) tunneling diodes formed at the side surface of a thin SiO2 film is proposed, where electrons transport in the vacuum channel between the electron emitter and collector electrode is modulated by an underneath gate electrode. The device performances are studied by the finite element simulation method. An on/off current ratio up to 10(5) and a subthreshold slope of similar to 500 mV/dec are obtained by simulation. Experimentally, a vacuum transistor based on SiO SiO (x) tunneling diodes in a surrounding structure is fabricated, achieving an on/off current ratio of 10(4) and a subthreshold slope of similar to 5 V/dec. The performance degradation in experiments is mainly attributed to unoptimized device structures.
引用
收藏
页码：3216 / 3220
页数：5
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