Quantum anomalous Hall phase and effective in-plane Lande-g factor in an inverted quantum well

被引：0
|
作者：
Saha, Sushmita [1 ]
Mawrie, Alestin [1 ]
机构：
[1] Indian Inst Technol Indore, Dept Phys, Indore 453552, India
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2024年 / 36卷 / 08期
关键词：
topological insulators; quantum spin Hall states; anomalous Hall states; Lande-g factor; CONDUCTION;
D O I：
10.1088/1361-648X/ad0a0f
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A suitable magnetic doped InAs/GaSb or HgTe/CdTe quantum well (QW) shows the coexistence of the quantum spin Hall and quantum anomalous Hall (QAH) phases. We study the topological transitions between these two topological states and confirm the possibility of the QAH phase through the calculations of quantum Hall conductance. The Hall plateau occurs at e(2)/h rather than 2e(2)/h at such a doping state indicating a QAH phase. Also, the latest experiment reported a robust quantized Hall conductance that persists in an in-plane magnetic field as strong as 12 Tesla. Based on the results of the cited experiment, we present here a precise calculation of the effective in-plane Lande-g factor. The paper predicts a certain range of controllable parameters in an inverted QW for enabling a dissipationless charge transport needed for spintronics application.
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页数：5
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