Traps inhomogeneity induced conversion of Shockley-Read-Hall recombination in NiO/β-Ga2O3 p+-n heterojunction diodes

被引:13
|
作者
Wang, Z. P. [1 ]
Gong, H. H. [1 ]
Yu, X. X. [1 ]
Hu, T. C. [1 ]
Ji, X. L. [1 ]
Ren, F. -F. [1 ]
Gu, S. L. [1 ]
Zheng, Y. D. [1 ]
Zhang, R. [1 ]
Ye, J. D. [1 ,2 ]
机构
[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Peoples R China
[2] Shandong Univ, Shenzhen Res Inst, Shenzhen 518000, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
SCHOTTKY-BARRIER DIODES; LEAKAGE CURRENT; ORIGIN;
D O I
10.1063/5.0138426
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this Letter, the trap inhomogeneity within beta-Ga2O3 is correlated with the conversion of Shockley-Read-Hall (SRH) recombination in NiO/beta-Ga2O3 p(+)-n heterojunction diodes. For the virgin epi-wafer, both near-surface traps E2 (E-C-0.82 eV) and E3 (E-C-1.11 eV) and bulk E2* traps (E-C-0.76 eV) are identified by a transient capacitance analysis, and the corresponding forward current-voltage characteristics of diodes are well fitted in the framework of field-dependent SRH recombination. The SRH recombination rates for E2, E3, and E2* traps are determined to be 1.3 x 10(7), 8.6 x 10(8), and 2.4 x 10(8) s(-1), respectively. In this circumstance, carrier transport under forward bias is governed by trap-assisted tunneling through E3 traps with high recombination rates, and the hysteresis is pronounced. With the removal of the defective surface layer, E2 and E3 traps are almost completely eliminated, together with the reduced density of E2* traps to 5.6 x 10(14) cm(-3). The resultant diode performs an improved rectification ratio of >10(11) at +/- 3 V and an enhanced reverse breakdown voltage of 1692 V. The elimination of near-surface traps leads to the conversion of carrier transport into the conventional SRH recombination, accompanied by the negligible forward hysteresis characteristics. The established fundamental correlation of carrier transport and traps within Ga2O3 is beneficial to develop a high-performance power rectifier toward practical applications.
引用
收藏
页数:6
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