Confocal micro-Raman spectroscopy study of phonon-plasmon modes in GaN structures for power devices

被引：0

作者：

Ortiga-Fibla, Jesus ^{[1
]}

Brunner, Frank ^{[2
]}

Treidel, Eldad Bahat ^{[2
]}

Garro, Nuria ^{[1
]}

Hilt, Oliver ^{[2
]}

Cros, Ana ^{[1
]}

机构：

[1] Inst Ciencia Mat Univ Valencia ICMUV, Paterna, Spain

[2] Ferdinand Braun Inst FBH, Wide Bandgap Elect Dept, Berlin, Germany

来源：

2023 14TH SPANISH CONFERENCE ON ELECTRON DEVICES, CDE | 2023年

关键词：

Confocal micro-Raman spectroscopy; phonon-plasmon coupling; transport properties; GaN; vertical GaN devices; MOBILITY;

D O I：

10.1109/CDE58627.2023.10339416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Confocal micro-Raman spectroscopy is presented as a non-invasive tool to address different material properties of semiconductors for power devices. In the present work, the quantification of carrier concentration and mobility are addressed by studying the evolution of different phonon modes and their coupling with the plasmon.

引用

页数：4

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