Determination of electron inelastic mean free path and stopping power of hafnium dioxide

被引:2
|
作者
Gong, J. M. [1 ]
Tokesi, K. [1 ,3 ]
Liu, X. [1 ]
Da, B. [4 ]
Yoshikawa, H. [4 ]
Tanuma, S. [5 ]
Ding, Z. J. [1 ,2 ]
机构
[1] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[3] Inst Nucl Res ATOMK, Debrecen, Hungary
[4] Natl Inst Mat Sci, Ctr Basic Res Mat, Tsukuba, Ibaraki 3050044, Japan
[5] Natl Inst Mat Sci, Mat Data Platform Ctr, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
关键词
Energy loss function; Dielectric function; Hafnium dioxide; Electron inelastic mean free path; ELEMENTAL SOLIDS; INORGANIC-COMPOUNDS; RANGE; REFLECTION; ENERGIES; FORMULA;
D O I
10.1016/j.rinp.2023.106609
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present inelastic mean free path (IMFP) and stopping power data of the hafnium dioxide applying the relativistic dielectric response theory. The energy loss function (ELF) derived from reflection electron energy loss spectroscopy spectrum with the reverse Monte Carlo method was used for the first time to obtain the IMFP and stopping power of HfO2. The probability of the energy loss is determined by the dielectric response function epsilon(q, omega) as a function of the frequency omega and the wavenumber q of the electromagnetic disturbance. Two algorithms, namely the full Penn algorithm (FPA) and the super-extended Mermin algorithm (SMA), were employed to expand the optical energy loss function, Im{-1/epsilon(0, omega)}, into the (q, omega)-plane. The results indicate that the IMFP and the stopping power obtained by using both algorithms are consistent at high electron energies, but show differences at low electron energies (less than similar to 70 eV). This discrepancy arises from the consideration of the finite plasmon lifetimes effect in the SMA model, while it is neglected in the FPA model. Additionally, we observed that the band gap has a significant influence on the IMFP and the stopping power at low electron energies. Typically, the inclusion of the band gap leads to an increase in the IMFP, because transition channels with energies larger than E - E-g - E-v are prohibited.
引用
收藏
页数:7
相关论文
共 50 条
  • [21] Electron inelastic mean free path at energies below 100 eV
    Nguyen-Truong, Hieu T.
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2017, 29 (21)
  • [22] ELASTIC AND INELASTIC MEAN-FREE-PATH DETERMINATION IN SOLID XENON FROM ELECTRON TRANSMISSION EXPERIMENTS
    BADER, G
    PERLUZZO, G
    CARON, LG
    SANCHE, L
    [J]. PHYSICAL REVIEW B, 1982, 26 (11): : 6019 - 6029
  • [23] ELASTIC BACKSCATTERING OF ELECTRONS FROM POLYCRYSTALLINE TUNGSTEN AND DETERMINATION OF ELECTRON INELASTIC MEAN FREE-PATH
    GOLEK, F
    DOLINSKI, W
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1995, 151 (02): : K37 - K40
  • [24] Extended Mermin Method for Calculating the Electron Inelastic Mean Free Path
    Da, B.
    Shinotsuka, H.
    Yoshikawa, H.
    Ding, Z. J.
    Tanuma, S.
    [J]. PHYSICAL REVIEW LETTERS, 2014, 113 (06)
  • [25] Determination of the inelastic mean free path of electrons in polythiophenes using elastic peak electron spectroscopy method
    Lesiak, B
    Kosinski, A
    Jablonski, A
    Kövér, L
    Tóth, J
    Varga, D
    Cserny, I
    Zagorska, M
    Kulszewicz-Bajer, I
    Gergely, G
    [J]. APPLIED SURFACE SCIENCE, 2001, 174 (01) : 70 - 85
  • [26] Experimental Determination of the Energy Dependence of Electron Inelastic Mean Free Path in Silicon Oxide and Silicon Nitride
    Garmash, V. I.
    Djuzhev, N. A.
    Kirilenko, E. P.
    Makhiboroda, M. A.
    Migunov, D. M.
    [J]. JOURNAL OF SURFACE INVESTIGATION, 2016, 10 (04): : 767 - 770
  • [27] Determination of the electron inelastic mean free path in some binary alloys for application in quantitative surface analysis
    Krawczyk, M
    Zommer, L
    Sobczak, JW
    Jablonski, A
    [J]. APPLIED SURFACE SCIENCE, 2004, 235 (1-2) : 15 - 20
  • [28] Experimental determination of the inelastic mean free path of electrons in GaSb and InSb
    Gergely, G
    Sulyok, A
    Menyhard, M
    Toth, J
    Varga, D
    Jablonski, A
    Krawczyk, M
    Gruzza, B
    Bideux, L
    Robert, C
    [J]. APPLIED SURFACE SCIENCE, 1999, 144-45 : 173 - 177
  • [29] Determination of the inelastic mean free path of electrons in different polyaniline samples
    Lesiak, B
    Jablonski, A
    Zemek, J
    Trchová, M
    Stejskal, J
    [J]. LANGMUIR, 2000, 16 (03) : 1415 - 1423
  • [30] Experimental determination of the inelastic mean free path of electrons in GaP and InAs
    Gergely, G
    Menyhard, M
    Gurban, S
    Benedek, Z
    Daroczi, C
    Rakovics, V
    Tóth, J
    Varga, D
    Krawczyk, M
    Jablonski, A
    [J]. SURFACE AND INTERFACE ANALYSIS, 2000, 30 (01) : 195 - 198