Interface Trap Charges Analysis on DC and High Frequency Characteristics of UTBB-FDSOI FET

被引：5
|
作者：
Awadhiya, Bhaskar [1 ]
Yadav, Shivendra [2 ]
Acharya, Abhishek [2 ]
机构：
[1] Manipal Inst Technol, Dept ECE, MAHE, Udupi 576104, Karnataka, India
[2] Sardar Vallabhbhai Natl Inst Technol Surat, Dept ECE, Surat, Gujarat, India
来源：
SILICON | 2023年 / 15卷 / 02期
关键词：
Ultra-thin body box (UTBB); Fully depleted silicon on insulator (FDSOI); Gain bandwidth product (GBP); Partially depleted silicon on insulator (PDSOI); Interface trap charge (ITC); TUNNEL FET; GATE; MOSFETS; PERFORMANCE; OPERATION; IMPACT; MODEL; SOI;
D O I：
10.1007/s12633-022-02053-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this paper, we have studied effect of localised charges on performance of UTBB FDSOI FET. Purpose behind this work is to understand the performance of UTBB FDSOI FET under the influence of interface trap charges which are generated due to radiation or stress induced damage. These localised charges may affect operating point of transistor and affect the circuit reliability. Various figure of merits such as transconductance, second order transconductance, drain conductance and RF parameters like cut off frequency and gain bandwidth product have been studied in presence of localised charges. It is found that the interface trap affects the performance in subthreshold region more severely as compared to triode and saturation region. These charges always reside in interface between silicon and silicon di oxide, hence study of devices with these charges are essential in order to optimize the effect of these charges accordingly.
引用
收藏
页码：937 / 942
页数：6
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