Characterization of ZnO Crystals of Various Geometries Grown by Mist Chemical Vapor Deposition on a c-Plane Sapphire Substrate

被引:1
|
作者
Kato, Kodai [1 ]
Iwata, Junichi [1 ]
Sakai, Masaru [2 ]
Hara, Kazuhiko [1 ]
Kouno, Tetsuya [1 ]
机构
[1] Shizuoka Univ, Fac Engn, Hamamatsu, Shizuoka 4328561, Japan
[2] Univ Yamanashi, Interdisciplinary Grad Sch, Kofu, Yamanashi 4008511, Japan
来源
关键词
crystal growth; mist chemical vapor deposition; ZnO; RANDOM LASER ACTION; SI(111) SUBSTRATE; NANOWIRES; POLARITY; LAYERS; FILM;
D O I
10.1002/pssb.202300550
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
ZnO nanowires, nanowalls, and thin-film-like crystals are grown simultaneously on a c-plane sapphire substrate by mist chemical vapor deposition (mist-CVD) at a high growth temperature. Mist-CVD is expected to be a potentially low-environment-impact and low-cost crystal growth technique. Using mist-CVD techniques, a spatial distribution of crystal growth is obtained owing to equipment configurations that enable the simultaneous fabrication of ZnO crystals of various geometries. Their crystallinity and photoluminescence properties are examined to clarify their potential applications and to investigate low-cost photonic applications based on these properties. Mist chemical vapor deposition (mist-CVD) is expected to be potentially low-environment-impact and low-cost crystal growth technique, and ZnO and related crystals have been investigated for use as UV-range optical materials. Herein, ZnO nanowires, nanowalls, and thin-film-like crystals are grown by mist-CVD, and their crystallinity and photoluminescence properties are examined to clarify their potential applications and to investigate low-cost photonic applications based on these properties.image (c) 2024 WILEY-VCH GmbH
引用
收藏
页数:5
相关论文
共 50 条
  • [1] Hexagonal ZnO microdisk grown by mist chemical vapor deposition on c-plane sapphire substrate and lasing actions
    Kato, Kodai
    Sakai, Masaru
    Yamazaki, Yuki
    Hara, Kazuhiko
    Kouno, Tetsuya
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2024, 63 (12):
  • [2] Lasing action of ZnO nanowires grown by mist chemical vapor deposition using thin Au layer on c-plane sapphire substrate
    Nakahara, Ryota
    Sakai, Masaru
    Kimura, Taiki
    Yamamoto, Mikihiro
    Syouji, Atsushi
    Hara, Kazuhiko
    Kouno, Tetsuya
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 60 (05)
  • [3] Thickness Dependence on Wavelength Range of Random Laser in Ultrathin ZnO Crystals Grown by Mist-CVD on C-plane Sapphire Substrate
    Iwata, Junichi
    Sakai, Masaru
    Syouji, Atsushi
    Hara, Kazuhiko
    Kouno, Tetsuya
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2023, 92 (09)
  • [4] Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System
    Abbas Sabbar
    Joshua M. Grant
    Perry C. Grant
    Wei Dou
    Bader Alharthi
    Baohua Li
    Fatma Yurtsever
    Seyed Amir Ghetmiri
    Mansour Mortazavi
    Hameed A. Naseem
    Shui-Qing Yu
    Aboozar Mosleh
    Zhong Chen
    Journal of Electronic Materials, 2020, 49 : 4809 - 4815
  • [5] Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System
    Sabbar, Abbas
    Grant, Joshua M.
    Grant, Perry C.
    Dou, Wei
    Alharthi, Bader
    Li, Baohua
    Yurtsever, Fatma
    Ghetmiri, Seyed Amir
    Mortazavi, Mansour
    Naseem, Hameed A.
    Yu, Shui-Qing
    Mosleh, Aboozar
    Chen, Zhong
    JOURNAL OF ELECTRONIC MATERIALS, 2020, 49 (08) : 4809 - 4815
  • [6] Photoluminescence properties and random lasing behaviors of mist-CVD-grown ZnO disordered nanocrystals on c-plane sapphire substrate
    Iwata, Junichi
    Sakai, Masaru
    Ohashi, Kosei
    Hara, Kazuhiko
    Kouno, Tetsuya
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 60 (10)
  • [7] SnO2 Thin Films Grown on m-Plane Sapphire Substrate by Mist Chemical Vapor Deposition
    Otabe, Tatsuya
    Sato, Takehide
    Matsushita, Junya
    Yatabe, Zenji
    Sue, Koji
    Nagaoka, Shoji
    Nakamura, Yusui
    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016,
  • [8] Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique
    Barick, Barun Kumar
    Prasad, Nivedita
    Saroj, Rajendra Kumar
    Dhar, Subhabrata
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2016, 34 (05):
  • [9] Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition
    Miyoshi, Makoto
    Yamanaka, Mizuki
    Egawa, Takashi
    Takeuchi, Tetsuya
    JOURNAL OF CRYSTAL GROWTH, 2019, 506 : 40 - 44
  • [10] Study of Mg-doped GaN thin films grown on c-plane sapphire substrate by plasma assisted metalorganic chemical vapor deposition method
    Subagio, A.
    Sutanto, H.
    Supriyanto, E.
    Budiman, M.
    Arifin, P.
    Sukirno
    Barmawi, M.
    NEUTRON AND X-RAY SCATTERING IN MATERIALS SCIENCE AND BIOLOGY, 2008, 989 : 224 - 227