Room-Temperature Low-Noise Amplifier With 11-K Average Noise From 0.6 to 2 GHz

被引：0
|
作者：
Shi, Jun [1 ]
Weinreb, Sander [2 ]
机构：
[1] Chinese Acad Sci, Natl Space Sci Ctr, Beijing 100190, Peoples R China
[2] CALTECH, Pasadena, CA 91125 USA
来源：
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2023年 / 33卷 / 11期
关键词：
High sensitivity; low-noise amplifier (LNA); noise temperature; radio astronomy; receiving system; wide band;
D O I：
10.1109/LMWT.2023.3315269
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, a low-noise amplifier (LNA) with 11-K average noise in the frequency range from 0.6 to 2 GHz at +25(degrees)C is designed, manufactured, and measured. The input matching network (IMN) of the amplifier is realized by a stepped high-impedance suspended substrate line structure that achieves input reflection coefficients lower than -10 dB over the whole frequency range. The LNA has an integrated temperature-stable noise calibration source for the system noise measurement. Furthermore, when the operating temperature drops to -40 degrees C, the average noise of the LNA will decrease to 7.5 K. The LNA achieves good noise without the need for high-cost cryogenics, which will greatly reduce the cost of high-performance receiving systems for wide-band applications at low microwave frequencies.
引用
收藏
页码：1540 / 1543
页数：4
相关论文
共 50 条
  • [41] A GAAS MONOLITHIC 6 GHZ LOW-NOISE AMPLIFIER FOR SATELLITE RECEIVERS
    MOTT, RC
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (03) : 565 - 570
  • [42] Monolithic active balun integrated with a 2.4 GHz low-noise amplifier
    Azevedo, Fernando
    Fortes, Fernando
    Rosario, M. Joao
    2007 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, VOLS 1 AND 2, 2007, : 621 - +
  • [43] A 26 GHz low-noise amplifier in 0.18μm CMOS technology
    Yu, KW
    Lu, YL
    Huang, DQ
    Chang, DC
    Liang, V
    Chang, MF
    EDMO2003: 11TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2003, : 93 - 98
  • [44] GaAs monolithic 6 GHz low-noise amplifier for satellite receivers
    Mott, Richard C., 1600, (37):
  • [45] LOW-NOISE 10.7 GHZ COOLED GAAS-FET AMPLIFIER
    TOMASSETTI, G
    WEINREB, S
    WELLINGTON, K
    ELECTRONICS LETTERS, 1981, 17 (25-2) : 949 - 951
  • [46] 24 GHz low-noise amplifier in 0.18 μm CMOS technology
    Yu, KW
    Lu, YL
    Huang, D
    Chang, DC
    Liang, V
    Chang, MF
    ELECTRONICS LETTERS, 2003, 39 (22) : 1559 - 1560
  • [47] A 750 MHz to 3 GHz tunable narrowband low-noise amplifier
    Andersson, Stefan
    Svensson, Christer
    NORCHIP 2005, PROCEEDINGS, 2005, : 8 - 11
  • [48] A multioctave (0.5-12.0 GHz) low-noise transistor amplifier
    Yanev, A.
    Ranev, V. Z.
    Zubov, P.
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2009, 52 (02) : 200 - 203
  • [49] 94-GHz MMIC CPW low-noise amplifier on InP
    Dambrine, G
    Hoel, V
    Boret, S
    Grimbert, B
    Bollaert, S
    Wallart, X
    Lepilliet, S
    Cappy, A
    GIGAHERTZ DEVICES AND SYSTEMS, 1999, 3861 : 32 - 37
  • [50] Fully integrated 1.9-GHz CMOS low-noise amplifier
    Electronics and Telecommunications, Research Inst, Taejon, Korea, Republic of
    IEEE Microwave Guided Wave Lett, 8 (293-295):
12345