共 50 条
- [31] About the physical origin of pixel flickering in cooled Hg0.7Cd0.3Te infrared photodetectors NOISE AND FLUCTUATIONS, 2005, 780 : 361 - 364
- [33] Hydrogenated amorphous Si as a passivant for p-type Hg0.7Cd0.3Te epilayers PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 84 - 87
- [34] PARAMAGNETIC POINT-DEFECTS IN BORON-IMPLANTED HG0.7CD0.3TE AND CDTE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3171 - 3174
- [35] Surface treatment effects on the electrical properties of the interfaces between ZnS and LPE-grown Hg0.7Cd0.3Te Journal of Electronic Materials, 1998, 27 : 684 - 688
- [37] Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures Journal of Electronic Materials, 2021, 50 : 3714 - 3721
- [39] ORIGIN OF 1/F NOISE OBSERVED IN HG0.7CD0.3TE VARIABLE AREA PHOTODIODE ARRAYS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 189 - 191
- [40] Carrier freezeout in n-on-p Hg0.7Cd0.3Te photodiode and acceptor level determination APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1997, 65 (03): : 325 - 328