Fine-tuning Cu-Co-Ce oxidation activity interface by unique microwave electromagnetic loss for boosting CO preferential oxidation in H2 steam

被引:7
|
作者
Wang, Lei [1 ]
Peng, Huan [2 ]
Li, Sheng-chen [1 ]
Li, Hua [3 ]
Shi, Shun-li [1 ]
Ding, Shun-min [1 ]
Zhao, Dan [1 ]
Wang, Shu-hua [1 ]
Chen, Chao [1 ]
机构
[1] Nanchang Univ, Coll Chem & Chem Engn, Key Lab Jiangxi Prov Environm & Energy Catalysis, Nanchang 330031, Peoples R China
[2] Pingxiang Univ, Coll Mat & Chem Engn, Pingxiang 337055, Peoples R China
[3] Nanchang Univ, Coll Resources & Environm, Nanchang 330031, Peoples R China
基金
中国国家自然科学基金;
关键词
Metal-organic frameworks; Doping magnetic Co; METAL-ORGANIC-FRAMEWORK; CUO-CEO2; CATALYSTS; PERFORMANCE; MOF; SITES;
D O I
10.1016/j.ijhydene.2022.09.042
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Construction of composite metal interfaces with synergistic catalysis is an important research field for CO preferential oxidation in H2 steam (CO-PROX). Microwave electromagnetic loss can effectively compensate the thermal action on the active interface derived from metal-organic frameworks (MOFs). Herein, a trimetallic CuCoCe-MOF is derived to construct Cu-Co-Ce oxidation active interface oriented by magnetic, conduction and relaxation loss, which inhibit the high temperature deactivation due to sintering. Equipped with the tandem microwave pyrolysis, the intermediate CuCoCe/C fully exposes electromagnetic characteristic and heterogeneous interfaces. Subsequently, microwave strengthened CuCoCeOx exhibits an excellent CO-PROX activity window with the more than 85% CO conversion within 80-210 & DEG;C. Besides, in-situ Raman and in-situ DRIFTs investigations demonstrate that the equilibrium of active interfacial oxygen vacancy via hydrogen is crucial for the temperature window broadening of CO-PROX. This work provides a route for the efficient conversion of microwave electromagnetic energy to enhance the active interface for synergistic catalysis. & COPY; 2022 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:25119 / 25132
页数:14
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