Characterization of Ultra-Fast Silicon Detectors (UFSD) for high energy physics applications

被引：0
|
作者：
Zareef, F. [1 ]
Oblakowska-Mucha, A. [1 ]
Szumlak, T. [1 ]
Moffat, N. [2 ]
Docheva, A. [3 ]
Cooke, N. [3 ]
Maneuski, D. [3 ]
Bates, R. [3 ]
Bullough, M. [4 ]
机构：
[1] AGH Univ Krakow, Al Adama Mickiewicza 30, PL-30059 Krakow, Poland
[2] Ctr Nacl Microelect, Barcelona 08193, Spain
[3] Univ Glasgow, Glasgow G12 8QQ, Scotland
[4] Micron Semicond Ltd, Al 83 Marlborough Rd, Lancing BN15 8SJ, England
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2024年 / 1061卷
关键词：
Particle trackers; Timing detectors; 4D tracking; Low Gain Avalanche Diodes (LGADs); Thin detectors;
D O I：
10.1016/j.nima.2024.169085
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Ultra-fast silicon detectors (UFSD) are a specialized type of radiation detectors based on Low Gain Avalanche Detectors (LGADs) that are designed to have extremely fast response times. This work presents detailed results on the study of 50 mu m thin-LGADs with different doping concentrations produced by Micron Semiconductors Ltd. A temperature dependent study of electrical characteristics and infrared laser measurements are presented in this work.
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