Demonstration of vertical schottky barrier diodes based on α-Ga2O3 thin films enabled by corundum structured rh-ITO bottom electrodes

This study explores the heteroepitaxial growth of alpha-Ga2O3 on rhombohedral indium tin oxide (rh-ITO) bottom electrodes for Schottky barrier diode applications. The investigation delves into the influence of growth temperature on alpha-Ga2O3 thin films, considering variations with and without alpha-Fe2O3 buffer layers. Results highlighted successful alpha-Ga2O3 growth on rh-ITO with an alpha-Fe(2)O(3 )buffer layer at temperatures ranging from 400 to 500 C-degrees. Additionally, kappa-Ga(2)O(3 )was observed on bare rh-ITO at 450 C-degrees and 500 C-degrees. A Schottky barrier diode was fabricated utilizing the alpha-Ga2O3 /rh-ITO heterostructure, incorporating a Ni/Au electrode for Schottky contacts. Current-voltage measurements exhibited rectification behavior. This research contributes valuable insights into the heteroepitaxial growth of alpha-Ga2O3 thin films and their potential applications in electronic devices.