Low-temperature solution-processed nanoparticle-doped nickel oxide thin-film transistor

被引:1
|
作者
Chen, Cihai [1 ,2 ]
Chen, Qizhen [2 ]
Yang, Qian [2 ]
Chen, Huipeng [2 ,3 ]
Guo, Tailiang [2 ]
机构
[1] Minnan Normal Univ, Coll Phys & Informat Engn, Zhangzhou 363000, Peoples R China
[2] Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350002, Peoples R China
[3] Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
基金
中国国家自然科学基金;
关键词
PEROVSKITE SOLAR-CELLS; HOLE-TRANSPORT LAYERS; HIGH-PERFORMANCE; ZNO; POLYMER; NIO;
D O I
10.1063/5.0121487
中图分类号
O59 [应用物理学];
学科分类号
摘要
Developing p-type oxide thin-film transistors (TFTs) is an essential path for further application in complementary metal oxide semiconductor (CMOS) components. However, the inferior electrical performance of p-type MO TFTs compared to n-type TFTs remains an ongoing challenge. Herein, for the first time, a low temperature, facile material engineering approach by incorporating n-type nanoparticles (NPs) was proposed for preparing p-type transparent NiOx TFTs. The characteristics of thin films blending NPs and the electrical performances of TFTs were investigated. The field effect mobility of TFTs with doping was nearly 20 times higher than pristine TFTs without doping, which was mainly beneficial from the suitable band alignment between NPs and p-type oxide, the increasing Ni3+ oxidation state in NiOx, as well as the improved dielectric/semiconductor interface quality. Electrons from drain electrode injected into metal oxide turn accepted in NPs rather than being trapped in the dielectric/semiconductor interface due to a strong surface electron depletion effect of NPs. NPs with small particle size and appropriate concentration would promote continuous hole transport by electrons transferring and reducing the interface trap state. The facile material engineering strategy is a promising technique for preparing p-type transparent MO-TFTs at low temperature, which showed great potential to be applicable in CMOS circuits on flexible substrates.
引用
收藏
页数:8
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