Influence of the positron implantation profile on the study of the defect depth distribution by the positron annihilation technique

被引：1

作者：

Dryzek, Jerzy ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Nucl Phys, PL-31342 Krakow, Poland

来源：

JOURNAL OF APPLIED PHYSICS | 2023年 / 133卷 / 05期

关键词：

NA-22;

D O I：

10.1063/5.0136261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formulas obtained for deconvolution of positron mean lifetime results in the sequential etching technique for detecting defect depth profiles are presented. In this experiment, only the conventional positron lifetime measurement with radioisotope-based positrons is used. The important role of the positron implantation profile is discussed. These formulas were successfully used to describe the depth profile of defects formed in sliding contact in pure vanadium. Two different layers were detected below the surface.

引用

页数：8

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