An effective solution to optimize the saddle-shape warpage in 3D IC applications by patterning laser treatment

被引：0

作者：

Fan, Dongyu ^{[1
,2
,3
]}

Xia, Zhiliang ^{[1
,2
,3
]}

Xie, Wei ^{[3
]}

Zhang, Jing ^{[3
]}

Yang, Yuancheng ^{[3
]}

Zhang, Kun ^{[3
]}

Liu, Lei ^{[3
]}

Yan, Yuan ^{[3
]}

Zhou, Wenxi ^{[3
]}

Huo, Zongliang ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Yangtze Memory Technol Co Ltd, Wuhan 430205, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2023年 / 38卷 / 02期

关键词：

saddle-shape warpage; laser annealing; multilayer structure; three-dimensional integrated circuits (3D ICs);

D O I：

10.1088/1361-6641/aca55a

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The asymmetric saddle-shape warpage is one of the hardest limitations on the development of three-dimensional integrated circuits (3D ICs) as the vertical integration increases. To improve the product yield, an effective method for saddle-shape warpage reduction in 3D IC production by backside patterning laser annealing treatment with a multilayer structure is investigated in this work. The reduction of saddle-shaped warpage by patterning laser treatment is the first time in 3D NAND array wafer application and through simulations and experiments, the laser annealing pattern is determined. In addition, the materials of the multilayer structure are selected as amorphous Al2O3 and TiN according to experiments and theoretical analysis. As a result, a conformal 47.8 mu m optimization of the saddle-shape warpage is successfully reached in a control wafer test by patterning laser annealing treatment.

引用

页数：7

共 6 条

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