Lithography-free high sensitivity perfect absorption based on Graphene/ α-MoO3/SiC and Tamm plasmonic structure

被引：10

作者：

Li, Zhenxing ^{[1
]}

Li, Huiling ^{[2
]}

Hu, Zheng-Da ^{[1
]}

Zhou, Jiacheng ^{[1
]}

Wang, Jicheng ^{[1
,3
]}

Khakhomov, Sergei ^{[4
]}

机构：

[1] Jiangnan Univ, Jiangsu Prov Res Ctr Light Ind Optoelect Engn & Te, Sch Sci, Wuxi 214122, Peoples R China

[2] Jiangnan Univ, Sch Foreign Studies, Wuxi 214122, Peoples R China

[3] Southeast Univ, State Key Lab Millimeter Waves, Nanjing 210096, Peoples R China

[4] Francisk Skorina Gomel State Univ, Dept Opt, Gomel 246019, BELARUS

来源：

OPTICS AND LASER TECHNOLOGY | 2024年 / 169卷

基金：

中国国家自然科学基金;

关键词：

Lithography-free; Perfect-absorption; Tamm phonon polariton; Graphene/alpha-MoO3/SiC; REFRACTIVE-INDEX SENSOR; NARROW-BAND; SURFACE; RESONANCE;

D O I：

10.1016/j.optlastec.2023.110125

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, we propose a tunable perfect-absorption lithography-free refractive index sensor structure, which couples the Tamm phonon polariton (TPhP) mode and Graphene/alpha-MoO3/SiC (GMS) mode. By aligning the modal frequencies of TPhP and GMS, the coupling of the two modes is realized with perfect absorption. We utilize the transfer matrix method (TMM), resonance equation and coupled mode theory (CMT) to theoretically analyze the absorption of different modes and apply the structure to refractive index sensor. By modulating the structure parameter, the sensitivity of the sensor can be as high as 6 mu m/RIU. This work could contribute to several fields such as refractive index sensors, photodetectors, absorbers, and energy harvesting devices.

引用

页数：7