Two-dimensional MoS2/diamond based heterojunctions for excellent optoelectronic devices: current situation and new perspectives

Two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) can be used as n-channel and is considered as a key candidate material to advance the promising development of optoelectronic device. The high thermal conductivity, breakdown voltage, carrier mobility, and high saturation velocity of diamond offer the possibility of making it high-frequency device material in high-temperature and high-power fields. The addition of 2D MoS2 nanolayers and nanosheets to diamond thin film to form heterojunction can improve the carrier transport performance of the optoelectronic device in harsh environments. In this perspective, the prospects of 2D MoS2/diamond heterojunction for challenges and new designs of optoelectronic applications are discussed, including photodetectors, memories, transistors, light emission diodes, and electron field emission devices to further explore the development of 2D material device field in complex environments.