Mid-Infrared Photothermal Imaging of Photochemically Patterned Polymer Gate Dielectrics for Organic Thin-Film Transistors

被引:0
|
作者
Kato, Ryo [1 ,2 ,3 ]
Taguchi, Koki [4 ,5 ,6 ]
Uemura, Takafumi [5 ,6 ]
Yano, Taka-aki [1 ,2 ,3 ]
Petritz, Andreas [7 ]
Stadlober, Barbara [7 ]
Sekitani, Tsuyoshi [4 ,5 ,6 ]
Tanaka, Takuo [1 ,2 ,3 ]
机构
[1] Tokushima Univ, Inst Postled Photon, Tokushima 7708506, Japan
[2] RIKEN Ctr Adv Photon, Innovat Photon Manipulat Res Team, Wako, Saitama 3510198, Japan
[3] RIKEN Cluster Pioneering Res, Metamaterials Lab, Wako, Saitama 3510198, Japan
[4] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan
[5] Osaka Univ, SANKEN The Inst Sci & Ind Res, Osaka, Ibaraki 5670047, Japan
[6] Natl Inst Adv Ind Sci & Technol, Adv Photon & Biosensing Open Innovat Lab, Suita, Osaka 5650871, Japan
[7] JOANNEUM Res Forschungsgesellschaft mbH, MAT Inst Sensors Photon & Mfg Technol, A-8160 Weiz, Austria
基金
日本学术振兴会;
关键词
mid-infrared photothermal microscopy; super-resolutioninfrared imaging; polymer gate dielectrics; organicthin-film transistor; photochemical patterning; THRESHOLD VOLTAGE; PERFORMANCE; CIRCUITS; ELECTRON;
D O I
10.1021/acsaelm.4c00161
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Mid-infrared photothermal (MIP) microscopy has recently attracted increasing attention for use in super-resolution infrared (IR) absorption imaging in a broad range of fields, including polymer sciences, owing to its high detection sensitivity and nanoscale spatial resolution. In this study, we present submicron IR imaging of ultrathin photopatternable polymer layers using MIP microscopy to visualize photochemically reacted micropatterns. Because micropatterning of ultrathin polymeric layers is beneficial for gate dielectrics to achieve operating organic thin-film transistors (OTFTs), we have demonstrated high-performance OTFTs with photopatterning of ultrathin polymer gate dielectrics and also examined the photochemical micropatterns by super-resolution IR imaging, which proved the successful photopatterning of ultrathin polymer gate dielectrics and provided direct spectroscopic insights into high-performance OTFTs in support of our experimental results. The present results demonstrate that MIP microscopy enables us to study the interfacial properties of photopatternable functional layers in electronic devices at the submicrometer scale and gain in-depth insights into engineering photolithographic base materials for electronics, thus accelerating the development of electronic devices.
引用
收藏
页码:2584 / 2593
页数:10
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