Characteristics of High-Power Impulse Magnetron Sputtering ITO/Ag/ITO Films for Application in Transparent Micro-LED Displays

被引:2
|
作者
Chang, Kai-Ping [1 ]
Chien, Yu-Wun [1 ]
Wang, Po-Hsiang [1 ,2 ]
Yen, Chao-Chun [1 ]
Lin, Ying-Xiang [3 ]
Gao, Ying-Jie [4 ]
Wu, Wan-Yu [1 ]
Wuu, Dong-Sing [5 ,6 ,7 ]
机构
[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan
[2] Natl Chung Hsing Univ, Dept Chem Engn, Taichung 40227, Taiwan
[3] Natl Chung Hsing Univ, Grad Inst Precis Engn, Taichung 40227, Taiwan
[4] Da Yeh Univ, Design & Mat Med Equipment & Devices, Changhua 515006, Taiwan
[5] Natl Chung Hsing Univ, Dept Mat Sci & Engn & Innovat, Taichung 40227, Taiwan
[6] Natl Chung Hsing Univ, Dev Ctr Sustainable Agr, Taichung 40227, Taiwan
[7] Natl Chi Nan Univ, Dept Appl Mat & Optoelect Engn, Nantou 54561, Taiwan
关键词
transparent micro-LED displays; transparent conductive film; indium tin oxide; HIPIMS; ITO; Ag; LIGHT-EMITTING-DIODES; ELECTRODES;
D O I
10.1021/acsaelm.2c01461
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, a blue transparent micro-LED display with a chip size of 20 mu m x 20 mu m, a pixel density of 152 PPI, a pixel spacing of 150 mu m, and a resolution of 64 x 32 has been fabricated. ITO/Ag/ITO transparent layers were deposited by high-power impulse magnetron sputtering. Sheet resistance was used to analyze the electrical properties of the indium tin oxide (ITO) layers, whereas scanning electron microscopy, transmission electron microscopy, and atomic force microscopy were used to examine the surface morphology. These results demonstrate that the ITO/Ag/ITO structure with 20 nm thick Ag has a lower sheet resistance (3.36 Cl/sq) and sufficient visible light transmittance (80.45%). The visible light transmittance of the ITO/Ag/ITO layers increased to 86% after rapid thermal annealing. In addition, surface roughness was minimized, and sheet resistance was further reduced, resulting in ohmic contact on n-GaN that is suited for applications involving transparent micro-LED displays.
引用
收藏
页码:905 / 912
页数:8
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