High-temperature resistivity in rare-earth nickelates films

被引：0

作者：

Stupakov, Alexandr ^{[1
]}

Kocourek, Tomas ^{[1
]}

de Prado, Esther ^{[1
]}

More-Chevalier, Joris ^{[1
]}

Vetokhina, Volha ^{[1
]}

Dejneka, Alexandr ^{[1
]}

Tyunina, Marina ^{[1
,2
]}

机构：

[1] Czech Acad Sci, Inst Phys, Slovance 2, Prague 18200, Czech Republic

[2] Univ Oulu, Fac Informat Technol & Elect Engn, Microelect Res Unit, POB 4500, FI-90014 Oulu, Finland

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2023年 / 587卷

关键词：

Rare-earth nickelate; Perovskite oxide; Hopping conductivity; Small polaron; Metal-insulator transition; METAL-INSULATOR-TRANSITION; THIN-FILMS; NONSTOICHIOMETRY; GROWTH;

D O I：

10.1016/j.jmmm.2023.171256

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We expand the temperature interval of the resistivity measurement to clarify the charge transport mechanisms in the rare-earth nickelates ReNiO3. Thin films of LaNiO3 demonstrate an expected metallic behavior at high temperatures: a perfect linear rise of the resistivity rho proportional to T is confirmed above room temperature. However, NdNiO3 films characterized by a sharp metal-to-insulator transition display a noticeable deviation of their high-temperature resistivity from the metallic linear relation. This deviation is suggested to originate from an additional thermally activated hopping transport. High-temperature hopping conductivity is also found in SmNiO3 films. Carrier localization due to disorder and the formation of small polarons is discussed as being responsible for hopping.

引用

页数：7

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