Selective area doping of GaN toward high-power applications

被引：8

作者：

Ferreyra, Romualdo Alejandro ^{[1
]}

Li, Bingjun ^{[2
]}

Wang, Sizhen ^{[2
]}

Han, Jung ^{[2
]}

机构：

[1] Univ Nacl San Martin, ICIFI CONICET UNSAM Campus Miguelete,Av 25 Mayo 11, RA-B1650KNA Buenos Aires, Argentina

[2] Yale Univ, Dept Elect Engn, 15 Prospect St, New Haven, CT 06511 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2023年 / 56卷 / 37期

关键词：

GaN; selective area etching; lateral regrowth; selective area doping; p-n junction; power devices; PRESSURE SOLUTION GROWTH; PLASMA-INDUCED DAMAGE; VAPOR-PHASE EPITAXY; P-N-JUNCTION; ION-IMPLANTATION; IMPURITY INCORPORATION; MAXIMUM-ENTROPY; DEPTH PROFILES; LASER-ABLATION; MG;

D O I：

10.1088/1361-6463/acd19d

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Selective area doping in GaN, especially p-type, is a critical and inevitable building block for the realization of advanced device structures for high-power applications, including, but not limited to, current-aperture vertical electron transistors, junction termination extensions, junction barrier Schottky diodes, junction field-effect transistors (JFETs), vertical-channel JFETs, U-shaped metal-oxide-semiconductor field-effect transistors (U-MOSFETs), and Fin MOSFETs. This paper reviews and summarizes some of the recent advances in the fields of selective area etching and regrowth, ion implantation, and polarity-dependent doping that may lead to the practical realization of GaN-based power devices.

引用

页数：15

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