Nanoassemblies Based on Semiconductor Quantum Dots and Porphyrin Molecules: Structure, Exciton-Phonon Interactions, and Relaxation Processes

被引:0
|
作者
Zenkevich, E. I. [1 ]
Gaponenko, S. V. [2 ]
von Borczyskowski, C. [3 ]
机构
[1] Belarussian Natl Tech Univ, Minsk, BELARUS
[2] Natl Acad Sci Belarus, B I Stepanov Inst Phys, Minsk, BELARUS
[3] Univ Technol Chemnitz, Inst Phys, Chemnitz, Germany
关键词
CdSe; ZnS semiconductor quantum dots; porphyrin; temperature dependences of absorption and photoluminescence spectra; exiton-phonon coupling; phase transition of stabilizing ligand layer; photoluminescence quenching; energy transfer; electron tunneling; CHEMISTRY;
D O I
10.1007/s10812-023-01535-5
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
Experimental temperature dependences (77-293 K) of absorption and photoluminescence spectra of CdSe/ZnS semiconductor quantum dots (QDs) were analyzed based on modern models of exciton-phonon coupling. It was proven that the first excitonic transition absorption band formed with participation primarily of optical phonons of the CdSe core while the photoluminescence properties reflected the interaction of the ZnS layer with optical phonons. Photoluminescence quenching for CdSe/ZnS QDs of various diameters upon formation of nanoassemblies with porphyrin molecules was analyzed in the framework of a quantum-mechanical model. It was shown that the quenching rate constant decreased with increasing QD diameter and that the quenching process under quantum confinement conditions was due to the electron of an excited electron-hole pair tunneling onto the QD surface with subsequent localization on surface traps.
引用
收藏
页码:289 / 298
页数:10
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