Design of a Dual-Band Load-Modulated Sequential Amplifier with Extended Back-off

被引:0
|
作者
You, Minghui [1 ]
Liu, Guohua [1 ]
Cheng, Zhiqun [1 ]
机构
[1] Hangzhou Dianzi Univ, Hangzhou 310018, Peoples R China
关键词
dual-band; reactance modulation network; load-modulated sequential amplifier; sequential power amplifier; output power back-off; DOHERTY POWER-AMPLIFIER;
D O I
10.1587/transele.2023ECS6002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter presents a dual-band load-modulated sequential amplifier (LMSA). The proposed amplifier changed the attenuator terminated at the isolation port of the four-port combiner of the traditional sequential power amplifier (SPA) architecture into a reactance modulation network (RMN) for load modulation. The impedance can be maintained pure resistance by designing RMN, thus realizing high efficiency and a good portion of the output power in the multiple bands. Compared to the dual-band Doherty power amplifier with a complex dual-band load modulation network (LMN), the proposed LMSA has advantages as maintaining high output power back-off (OBO) efficiency, wide bandwidth and simple construction. A 10-watt dual-band LMSA is simulated and measured in 1.7-1.9 GHz and 2.4-2.6 GHz with saturated efficiencies 61.2-69.9% and 54.4-70.8%, respectively. The corresponding 9 dB OBO efficiency is 46.5-57.1% and 46.4-54.4%, respectively.
引用
收藏
页码:808 / 811
页数:4
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