Investigation on Polishing the Concave Surface of Zirconia Ceramics with Magnetic Compound Fluid Enhanced by Hydration Reaction

被引:1
|
作者
Li, Xiaoxing [1 ]
Huang, Jian [2 ]
Cao, Qipeng [3 ]
Liao, Yuhui [4 ]
Feng, Ming [4 ]
机构
[1] Zhejiang Ind & Trade Vocat Coll, Fac Optoelect Mfg, Wenzhou 325600, Peoples R China
[2] CCCC Second Harbor Engn Co Ltd, Wuhan 400430, Peoples R China
[3] Sch Wenzhou Polytech, Intelligent Mfg Coll, Wenzhou 325035, Peoples R China
[4] Wenzhou Univ, Coll Mech & Elect Engn, Wenzhou 325035, Peoples R China
关键词
hydration reaction; magnetic field; zirconia ceramics; FEASIBILITY; ROUGHNESS;
D O I
10.3390/magnetochemistry9030074
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Zirconia ceramics are prominent engineering materials and are widely used in computers, consumer electronics, and the fifth-generation communication industry. However, zirconia ceramics are a typical hard-to-cut material, and the product structures are more complex as the demanding on the industry increases. In this case, the polishing efficiency should be improved for meeting these requirements. To overcome the problem of polishing concave surfaces of zirconia ceramics, a small polishing tool with a magnetic compound fluid (MCF) was invented. The effect of the polishing parameters on the surface roughness and material removal rate was analyzed by an L9(3(3)) orthogonal experiment. The weight ratio of the parameters was also studied based on the experimental results. With the combination of chemical and mechanical functions, the polishing characteristics were further examined. Based on the soaking experiments, the material removal mechanism is discussed. The results are as follows: (1) the optimal polishing parameters were the revolution speed of the MCF carrier n(c) of 400 rpm, the working gap h of 0.1 mm, the CIP size D of 5 mu m for better surface roughness, the revolution speed of the MCF carrier n(c) of 400 rpm, the working gap h of 0.1 mm, and the CIP size D of 7 mu m for a higher material removal rate. The impact degrees on surface roughness and material removal rate were a revolution speed of the MCF carrier of 54% > working gap of 31%> CIP size of 15% and working gap of 40% > revolution speed of the MCF carrier of 32% > and CIP size of 18%, respectively. (2) Surface roughness was rapidly reduced in the first 20 min and tended to be stable in the last 10 min of polishing. A circular polished area was observed on the flat workpiece for studying the typical material removal curve, and the deepest point was found at the fringe of the material removal curve. The concave workpiece was polished successfully, and the best surface roughness R-a reached 1 nm and 1.2 nm. (3) A pH = 10 with a sodium hydroxide (NaOH) solution has a greater performance in hardness reduction. The chemical and mechanical functions were combined to remove material to enhance the polishing efficiency. All in all, the proposed polishing method with a combination of a small MCF polishing tool and hydration reaction was effective for polishing zirconia ceramics.
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页数:13
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