Thin-Film Organic Heteroepitaxy

被引:4
|
作者
Dull, Jordan T. [1 ]
He, Xu [1 ]
Viereck, Jonathan [2 ,3 ]
Ai, Qianxiang [4 ,5 ]
Ramprasad, Ritika [1 ]
Otani, Maria Clara [1 ]
Sorli, Jeni [6 ]
Brandt, Jason W. [7 ]
Carrow, Brad P. [7 ]
Tinoco, Arthur D. [8 ]
Loo, Yueh-Lin [6 ]
Risko, Chad [4 ,5 ]
Rangan, Sylvie [2 ,3 ]
Kahn, Antoine [1 ]
Rand, Barry P. [1 ,9 ]
机构
[1] Princeton Univ, Dept Elect & Comp Engn, Princeton, NJ 08544 USA
[2] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[3] Rutgers State Univ, Lab Surface Modificat, Piscataway, NJ 08854 USA
[4] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA
[5] Univ Kentucky, Ctr Appl Energy Res, Lexington, KY 40506 USA
[6] Princeton Univ, Dept Chem & Biol Engn, Princeton, NJ 08544 USA
[7] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA
[8] Univ Puerto Rico, Dept Chem, Rio Piedras Campus, San Juan, PR 00925 USA
[9] Princeton Univ, Andlinger Ctr Energy & Environm, Princeton, NJ 08544 USA
基金
美国国家科学基金会;
关键词
crystal growth; heteroepitaxy; organic materials; small molecules; P-SEXIPHENYL MONOLAYER; WEAK EPITAXY GROWTH; MULTILAYERS; DEFECTS; CRYSTAL; TOOLS; LAW;
D O I
10.1002/adma.202302871
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Incorporating crystalline organic semiconductors into electronic devices requires understanding of heteroepitaxy given the ubiquity of heterojunctions in these devices. However, while rules for commensurate epitaxy of covalent or ionic inorganic material systems are known to be dictated by lattice matching constraints, rules for heteroepitaxy of molecular systems are still being written. Here, it is found that lattice matching alone is insufficient to achieve heteroepitaxy in molecular systems, owing to weak intermolecular forces that describe molecular crystals. It is found that, in addition, the lattice matched plane also must be the lowest energy surface of the adcrystal to achieve one-to-one commensurate molecular heteroepitaxy over a large area. Ultraviolet photoelectron spectroscopy demonstrates the lattice matched interface to be of higher electronic quality than a disordered interface of the same materials.
引用
收藏
页数:8
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