Characterization of thin films Al/p-Cu2ZnSnS4 (CZTS)/Mo Schottky diode: the effect of CZTS thin film thickness

被引：1

作者：

Bousselmi, G. ^{[1
]}

Hannachi, A. ^{[1
]}

Khemiri, N. ^{[1
]}

Kanzari, M. ^{[2
]}

机构：

[1] Univ Tunis El Manar, Ecole Natl Ingn Tunis, Lab Photovolta & Mat Semicond, Tunis 1002, Tunisia

[2] Univ Tunis, Lab Photovolta & Mat Semicond ENIT, IPEITunis Montfleury, Rue Jawaher Lel Nehru, Montfleury 1089, Tunisia

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2024年 / 35卷 / 01期

关键词：

SOLAR-CELLS; TEMPERATURE; PARAMETERS;

D O I：

10.1007/s10854-023-11575-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, the effect of Cu2ZnSnS4 (CZTS) film thickness (d) on structural and morphological properties of Cu2ZnSnS4/Mo films and electrical properties of Al/p-Cu2ZnSnS4/Mo Schottky diodes was investigated. X-ray diffraction, Raman spectroscopy, and scanning electron microscopy analyses suggest an improvement in crystalline quality of CZTS/Mo films with the increase of thickness. Electrical properties of Al/p-CZTS/Mo Schottky diodes were analyzed using I-V characteristics. Schottky diode parameters such as ideality factor, saturation current, and series resistance were calculated. Ideality factor and series resistance decrease from 1.62 to 1.32 and from 206 to 144 Omega, respectively, by increasing the thickness of CZTS layer. Impedance spectroscopy measurements highlight a decrease in resistance as a function of temperature, suggesting thermal activation of the process.

引用

页数：10

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