Structural, Morphological, Optical Properties and Impedance Analysis of Solution-Processable Ni-Doped CuO Thin Films on ITO/Glass Substrates

被引:1
|
作者
Mai, La Thi Ngoc [1 ]
Loi, Nguyen Van [2 ]
Minh, Do Hong [3 ]
Thanh, Dang Van [4 ]
Trinh, Bui Nguyen Quoc [1 ,5 ]
机构
[1] Vietnam Natl Univ, Vietnam Japan Univ, Fac Adv Technol & Engn, Nam Tu Liem, Hanoi, Vietnam
[2] Univ Sci, Vietnam Natl Univ, Fac Phys, 334 Nguyen Trai, Thanh Xuan, Hanoi, Vietnam
[3] Le Quy Don Tech Univ, Fac Phys & Chem Engn, Bldg S1, 236 Hoang Quoc Viet, Cau Giay, Hanoi, Vietnam
[4] Thai Nguyen Univ, Univ Med & Pharm, Fac Basic Sci, 284 Luong Ngoc Quyen St, Thai Nguyen City, Thai Nguyen Pro, Vietnam
[5] Univ Engn & Technol, Vietnam Natl Univ, Key Lab Micronano Technol, 144 Xuan Thuy, Cau Giay, Hanoi, Vietnam
关键词
Ni-doped CuO; ITO; solution process; impedance analysis; relaxation time; SOLAR-CELLS; OXIDE; SPECTROSCOPY; THICKNESS; GROWTH;
D O I
10.2320/matertrans.MT-MG2022027
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cupric-oxide-based thin films with various amounts of 0, 1, 2, 3, and 4 wt.% Ni doping were, in turn, deposited on ITO/glass substrates via a solution process. The 0.25 M concentrated solutions of copper (II) acetate monohydrate and nickel acetate tetrahydrate were used as starting materials mixed in ethanol solvent, in order to form the precursors. We obtained that the crystalline structure was not affected by the increase in Ni doping concentration as evidenced by X-ray diffraction patterns. The surface morphology observed by scanning electron microscope pointed out the presence of linked-structure nanoparticles. The influence of Ni doping on the optical bandgap width was evaluated by using ultraviolet visible spectrometry. We found that the optical bandgap should be direct, and it decreased from 2.69 to 2.38 eV for the range doped. Interestingly, we determined the relaxation time of the Ni-doped CuO/ITO/glass structure from measuring the electrochemical impedance spectroscopy, and it was 0.36 s for the undoped film, then gradually decreased to be 0.31, 0.11, 0.1, and 0.04 s with increasing the Ni doping concentration. This achievement result will serve as a foundation for the future photonic researches.
引用
收藏
页码:2151 / 2157
页数:7
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