Piezotronic Effect based ZnO Pressure Sensor with TFT Structures

被引：0
|
作者：
Kim, Ki-Nam [1 ]
Ko, Woon-San [1 ]
Byun, Jun-Ho [1 ]
Lee, Do-Yeon [1 ]
Kim, Eun-Gi [1 ]
Koo, Eun-A [1 ]
Kwon, So-Yeon [1 ]
Lee, Ga-Won [1 ]
机构：
[1] Chungnam Natl Univ, Daejeon, South Korea
来源：
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年
基金：
新加坡国家研究基金会;
关键词：
Piezotronic; ZnO; TFT; Pressure; Sensor;
D O I：
10.1109/EDTM55494.2023.10102984
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents piezotonic effect based ZnO TFT pressure sensor with nanorods (NRs), which is different from the vertical structure of conventional piezoelectric sensors. The NRs were grown over the planar channels of TFTs. It is a medium of pressure amplification because of the small force transmission area. The fabricated sensor has 16 times higher sensitivity compared to a thin film without NRs. The effect of NRs was studied experimentally and with SPICE distributed modeling simulation. To explain these all, channel mobility is investigated as new possible sensing mechanism of the piezotronic pressure sensors with COMSOL simulation.
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页数：3
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