Attainment of nearly thermally limited subthreshold slope in GaAs MOSFETs with in-situ Y2O3 gate dielectric for cryogenic electronics

被引：0

作者：

Young, L. B. ^{[1
,2
]}

Liu, J. ^{[3
]}

Lin, Y. -H. G. ^{[1
,2
]}

Wan, H. -W. ^{[1
,2
]}

Cheng, Y. -T. ^{[1
,2
]}

Kwo, J. ^{[4
]}

Hong, M. ^{[1
,2
,3
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[4] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

来源：

2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DAT | 2023年

关键词：

D O I：

10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have achieved subthreshold slope (SS) values close to the thermal limited values in GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). The low interfacial trap density (D-it) at the in-situ prepared Y2O3/GaAs(001) has attributed to these low SS values of 63 mV/dec at 300 K and 18 mV/dec at 77 K, respectively. The SS value of our GaAs MOSFETs at 77 K is comparable to those of the SiO2/Si MOSFETs at 77 K and InGaAs high-electron-mobility transistors (HEMTs) at 5K, suggesting the GaAs MOSFETs for cryogenic low-power application.

引用

页数：2

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