In this study, the performances of highly sensitive Ce-doped Bi2S3 thin film-based photodetectors is discussed. The Bi2S3:Ce thin films were successfully coated by using the nebulizer spray pyrolysis method on glass substrates with varying Ce concentrations of 0%, 2%, 4%, 6%, and 8%. Furthermore, the physical properties such as crystalline size, morphology and optical response of Bi2S3:Ce thin films were investigated through x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), atomic force microscopy, optical absorption spectrophotometry, and photoluminescence spectroscopy (PL). The XRD study showed that 4% Ce-doped Bi2S3 film shows higher crystallinity. UV-visible studies showed that the absorption spectrum has a direct electronic transition with an energy gap of about 1.68 eV. The morphological studies revealed that the Bi2S3:Ce samples showed uniformly distributed nanoflakes. The 4% Ce-doped Bi2S3 film photodetector exhibited high responsivity (R) and detectivity (D*) and showed a fast photoresponse for about 5 s and 2.6 s with the external quantum efficiency (EQE) of 435%, which makes it highly suitable as a high-performance photodetector.{GRAPHIACAL ABSTRACT}