The Impact of the Micro-Structure within Passivated Layers on the Performance of the a-Si:H/c-Si Heterojunction Solar Cells

被引：2

作者：

Lee, Sunhwa ^{[1
]}

Park, Jinjoo ^{[2
]}

Pham, Duy Phong ^{[1
]}

Kim, Sangho ^{[3
]}

Kim, Youngkuk ^{[1
]}

Trinh, Thanh Thuy ^{[4
,5
]}

Dao, Vinh Ai ^{[6
]}

Yi, Junsin ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon 16419, Gyeonggi Do, South Korea

[2] Cheongju Univ, Div Energy & Opt Technol Convergence, Major Energy & Appl Chem, Cheongju 28503, South Korea

[3] Sungkyunkwan Univ, Dept Energy Sci, 2066 Seobu Ru, Suwon 16419, Gyeonggi Do, South Korea

[4] Int Univ, Linh Trung Ward, Dept Phys, Block 6, Ho Chi Minh City 720400, Vietnam

[5] Vietnam Natl Univ, Ho Chi Minh City 700000, Vietnam

[6] Ho Chi Minh City Univ Technol & Educ, Fac Appl Sci, Dept Phys, Ho Chi Minh City 700000, Vietnam

来源：

ENERGIES | 2023年 / 16卷 / 18期

关键词：

passivation; a-Si:H(i) thin film; post-hydrogen plasma treatment; silicon heterojunction solar cell; SILICON; EFFICIENCY;

D O I：

10.3390/en16186694

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This study investigated the correlation between the degree of disorder of the post-hydrogen plasma treatment (HPT) of the intrinsic hydrogenated amorphous silicon (a-Si:H(i)) and the device characteristics of the a-Si:H/c-Si heterojunction (HJ) solar cells. The reduction in the degree of disorder helps to improve interface defects and to enhance the effective carrier lifetime of the a-Si:H/c-Si heterojunction. The highest effective minority carrier lifetime of 2.08 ms was observed in the film with the lowest degree of disorder of 2.03. The devices constructed with HPT a-Si:H(i) having a lower degree of disorder demonstrated higher device performance in terms of open-circuit voltage (V-oc), fill factor (FF), and subsequent conversion efficiency. An a-Si:H(i) with a lower degree of disorder (2.03) resulted in a higher V-oc of 728 mV and FF of 72.33% and achieved a conversion efficiency of up to 20.84% for the a-Si:H/c-Si HJ silicon solar cell.

引用

页数：9

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