Reducing Magnetic Anisotropy Variation of Permalloy Thin Films in the dc-Magnetron Sputtering

被引:0
|
作者
Yoon, Seungha [1 ]
机构
[1] Korea Inst Ind Technol, Green Energy & Nanotechnol R&D Grp, Gwangju 61012, South Korea
关键词
magnetic anisotropy; permalloy; thin film; dc magnetron sputtering; SILICON;
D O I
10.4283/JMAG.2023.28.3.286
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Considerable attention has been given to controlling magnetic anisotropy for future flexible spintronic devices because the magnetization behavior of magnetic thin film and device changes with the bending stress, which is known as the inverse-magnetostriction effect. The net magnetic anisotropy resulting from the fabrication process plays a significant role in determining the working functions for magnetic field applications. In this study, the variation of intrinsic magnetic anisotropy in permalloy thin films was investigated depending on the dcmagnetron sputtering position. The randomly formed magnetic easy-axis was finally controlled by the application of magnetic field during the sample deposition.
引用
收藏
页码:286 / 289
页数:4
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