Si-based photodetector with very broadband response from visible to mid-infrared spectral range

被引:1
|
作者
Su, Zih-Chun [1 ]
Lin, Ching-Fuh [1 ]
机构
[1] Natinoal Taiwan Univ, Grad Insitutie Photon & Optoelectron, Taipei, Taiwan
关键词
silicon-based photodetector; silicon photonic; barrier height; image force; internal photon-emission;
D O I
10.1109/SiPhotonics55903.2023.10141945
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Our investigation shows that Si-based photodetector is capable of detecting optical signal from visible to mid-infrared spectral range. The optical-response using Si-Cr Schottky junction operated under appropriate bias has also been demonstrated to increase 25 times at the 4300 nm wavelength, compared to zero bias.
引用
收藏
页数:2
相关论文
共 50 条
  • [31] Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range
    Aït-Kaci, H
    Nieto, J
    Rodriguez, JB
    Grech, P
    Chevrier, F
    Salesse, A
    Joullié, A
    Christol, P
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (04): : 647 - 651
  • [32] A high performance, visible to mid-infrared photodetector based on graphene nanoribbons passivated with HfO2
    Yu, Xuechao
    Dong, Zhaogang
    Liu, Yanping
    Liu, Tao
    Tao, Jin
    Zeng, Yongquan
    Yang, Joel K. W.
    Wang, Qi Jie
    NANOSCALE, 2016, 8 (01) : 327 - 332
  • [33] A novel Si-based photodetector with flat-top and steep-edge spectral response
    Zhang, Xueqiang
    Huang, Yongqing
    Duan, Xiaofeng
    Fan, Xinye
    Wang, Qi
    Zhang, Xia
    Shen, Bing
    Wang, Wei
    Ren, Xiaomin
    OPTICS COMMUNICATIONS, 2012, 285 (21-22) : 4338 - 4343
  • [34] Fast-Response, Broadband Si-Based Photothermoelectric Photodetector Based on RF-Sputtering PbTe Film
    Liu, Lixin
    Gou, Jun
    Dou, Han
    Li, Chunyu
    Yang, Xiutao
    Han, Jiayue
    Yu, Hang
    Yu, He
    Wu, Zhiming
    Jiang, Yadong
    Wang, Jun
    ACS PHOTONICS, 2024, 11 (11): : 4751 - 4760
  • [35] Ultra broadband mid-infrared Ge-on-Si polarization rotator
    Gallacher, Kevin
    Millar, Ross W.
    Griskeviciute, Ugne
    Paul, Douglas J.
    2019 IEEE 16TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2019), 2019,
  • [36] Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region
    Jia, Bo Wen
    Tan, Kian Hua
    Loke, Wan Khai
    Wicaksono, Satrio
    Yoon, Soon Fatt
    OPTICS EXPRESS, 2018, 26 (06): : 7227 - 7234
  • [37] Mid-infrared plasmonically induced absorption and transparency in a Si-based structure for temperature sensing and switching applications
    Shahamat, Yadollah
    Vahedi, Mohammad
    OPTICS COMMUNICATIONS, 2019, 430 : 227 - 233
  • [38] InAs-based dilute nitride materials and devices for the mid-infrared spectral range
    Krier, A.
    de la Mare, M.
    Zhuang, Q.
    Carrington, P. J.
    Patane, A.
    QUANTUM SENSING AND NANOPHOTONIC DEVICES X, 2013, 8631
  • [39] Mitigation of optical bistability in Si-based mid-infrared photonic crystal cavities using surface treatments
    Shankar, Raji
    Bulu, Irfan
    Leijssen, Rick
    Leonard, Kogos
    Loncar, Marko
    2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012,
  • [40] Broadband visible to mid-infrared aluminum-black absorbers and the aging behavior
    Hao, Yan
    Yang, Suhui
    Ling, Chen
    Li, Zhuo
    Wang, Xin
    Zhang, Jinying
    Liao, Yingqi
    INFRARED PHYSICS & TECHNOLOGY, 2021, 115