Simulation of Copper Nanostructure Formation on Silicon Dioxide Microsubstrate Surface

被引：1
|
作者：
Fairushin, I. I. [1 ,2 ]
Shemakhin, A. Yu. [1 ]
机构：
[1] Kazan Volga Reg Fed Univ, Kazan 420008, Russia
[2] Joint Inst High Temp, Moscow 125412, Russia
来源：
HIGH ENERGY CHEMISTRY | 2023年 / 57卷 / SUPPL 1期
基金：
俄罗斯科学基金会;
关键词：
gas discharge; molecular dynamics; deposition; copper nanostructure; silicon dioxide; MOLECULAR-DYNAMICS SIMULATION; PLASMA; DISCHARGE; MACROPARTICLES; APPROXIMATION; CU;
D O I：
10.1134/S001814392307010X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The process of copper nanostructure formation on a silicon dioxide substrate was simulated using the molecular dynamics method. The process parameters corresponded to the conditions in a low-pressure gas-discharge plasma. The relationship between the nanostructure formation rate and the main plasma parameters was determined.
引用
收藏
页码：S41 / S44
页数：4
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