Investigation of high resistivity p-type FZ silicon diodes after 60Co y-irradiation

被引：2
|
作者：
Liao, C. [1 ]
Fretwurst, E. [1 ]
Garutti, E. [1 ]
Schwandt, J. [1 ]
Pintilie, I. [2 ]
Nitescu, A. [2 ]
Himmerlich, A. [3 ]
Moll, M. [3 ]
Gurimskaya, Y. [3 ]
Li, Z. [4 ]
机构：
[1] Univ Hamburg, Inst Expt Phys, Hamburg, Germany
[2] Natl Inst Mat Phys, Bucharest, Romania
[3] CERN, European Org Nucl Res, Geneva, Switzerland
[4] Ludong Univ, Coll Phys & Optoelect Engn, Yantai, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2024年 / 1061卷
基金：
欧盟地平线“2020”;
关键词：
60Co y-rays; FZ p-type silicon; Radiation damage; BiOi; CiOi; TSC; DLTS; Surface current; THERMALLY STIMULATED CURRENT; FLOAT-ZONE SILICON; 2ND-ORDER GENERATION; POINT-DEFECTS; DETECTORS; STANDARD; CENTERS; DAMAGE; ELECTRONS; LEVEL;
D O I：
10.1016/j.nima.2024.169103
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In this work, the effects of 60Co y -ray irradiation on high resistivity p -type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and 2 MGy. Both macroscopic (I-V, C-V) and microscopic investigations, by means of Thermally Stimulated Current (TSC) and Deep Level Transient Spectroscopy (DLTS) techniques, were conducted to characterize the radiation -induced changes. The investigated diodes were manufactured on high resistivity p -type Float Zone (FZ) silicon and were further classified into two types based on the isolation technique between the pad and guard ring: p -stop and p -spray. After irradiation, the macroscopic results of current-voltage and capacitance-voltage measurements were obtained and compared with existing literature data. Additionally, the microscopic measurements focused on the development of the concentration of different radiation -induced defects, including the Boron interstitial -Oxygen interstitial (BiOi) complex, the Carbon interstitial -Oxygen interstitial (CiOi) defect, the H40K, and the so-called I*P. To investigate the thermal stability of induced defects in the bulk, isochronal annealing studies were performed in the temperature range of 100 degrees C to 300 degrees C. These annealing processes were carried out on diodes irradiated with doses of 1 and 2 MGy. Furthermore, in order to investigate the unexpected results observed in the C-V measurements after irradiation with high dose values, the surface conductance between the pad and guard ring was measured as a function of both dose and annealing temperature.
引用
收藏
页数：11
相关论文
共 50 条
  • [21] Effects of high-temperature anneals and 60Co gamma-ray irradiation on strained silicon on insulator
    Park, K.
    Canonico, M.
    Celler, G. K.
    Seacrist, M.
    Chan, J.
    Gelpey, J.
    Holbert, K. E.
    Nakagawa, S.
    Tajima, M.
    Schroder, D. K.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)
  • [22] Effects of High Temperature Anneals and 60Co Gamma Ray Irradiation on Strained Silicon-on-Insulator (sSOI)
    Park, K.
    Canonico, M.
    Celler, G. K.
    Seacrist, M.
    Chan, J.
    Gelpey, J.
    Holbert, K. E.
    Nakagawa, S.
    Tajima, M.
    Schroder, D. K.
    2007 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 2007, : 61 - +
  • [23] INFLUENCE OF UNIAXIAL DEFORMATION ON THE PHOTOCURRENT RELAXATION TIME OF HIGH-RESISTIVITY P-TYPE SILICON.
    Saidov, M.S.
    Abdullaev, G.A.
    Saidov, A.S.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 7 (12):
  • [24] BOUND SPACE-CHARGE IN HIGH-RESISTIVITY COMPENSATED P-TYPE SILICON WITH GOLD CONTACTS
    BYKOVSKII, YA
    ZUEV, VV
    CHUFAROV, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (01): : 159 - 160
  • [25] Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures
    Makarenko, L. F.
    Lastovski, S. B.
    Korshunov, F. P.
    Murin, L. I.
    Moll, M.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 4561 - 4564
  • [26] Capacitance-voltage characterization for MOS capacitor on p-type high-resistivity silicon substrate
    Rong, B
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 198 - 201
  • [27] BOUND SPACE CHARGE IN HIGH-RESISTIVITY COMPENSATED p-TYPE SILICON WITH GOLD CONTACTS.
    Bykovskii, Yu.A.
    Zuev, V.V.
    Chufarov, V.A.
    1600, (07):
  • [28] INFLUENCE OF UNIAXIAL DEFORMATION ON PHOTOCURRENT RELAXATION-TIME OF HIGH-RESISTIVITY P-TYPE SILICON
    SAIDOV, MS
    ABDULLAE.GA
    SAIDOV, AS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (12): : 1572 - 1572
  • [29] Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon
    Bruzzi, M
    Bisello, D
    Borrello, L
    Borchi, E
    Boscardin, M
    Candelori, A
    Creanza, D
    Dalla Betta, GFD
    DePalma, M
    Dittongo, S
    Focardi, E
    Khomenkov, V
    Litovchenko, A
    Macchiolo, A
    Manna, N
    Menichelli, D
    Messineo, A
    Miglio, S
    Petasecca, M
    Piemonte, C
    Pignatel, GU
    Radicci, V
    Ronchin, S
    Scaringella, M
    Segneri, G
    Sentenac, D
    Tosi, C
    Zorzi, N
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 552 (1-2): : 20 - 26
  • [30] Development of the conductivity type inversion caused by thermal double donors’ formation in p-type high-resistivity silicon
    Li, Minghao
    Liu, Yun
    Wei, Tao
    Dai, Rongwang
    Wang, Hao
    Xue, Zhongying
    Wei, Xing
    Applied Physics Express, 2023, 16 (03):
12345