A CuxS/GO composite hole transport layer for photovoltaic performance enhancement on CuInS2 quantum dot-sensitized solar cells

被引：3
|
作者：
Peng, Zhuoyin [1 ]
Luo, Wen [1 ]
Long, Chengtang [1 ]
Wang, Yue [1 ]
Fu, Yilong [1 ]
机构：
[1] Changsha Univ Sci & Technol, Sch Energy & Power Engn, Hunan Prov 2011 Collaborat Innovat Ctr Clean Ener, Key Lab Efficient & Clean Energy Utilizat,Educ De, Changsha 410111, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2023年 / 129卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Quantum dot-sensitized solar cells; CuxS; GO composite hole transport layer; Charge transfer efficiency; Photovoltaic performance enhancement; EFFICIENCY;
D O I：
10.1007/s00339-022-06330-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, a CuxS/GO composite hole transport layer is prepared on the surface of TiO2/CuInS2 photo-electrodes to modulate the charge transfer efficiency of quantum dot-sensitized solar cells. The normalized PL intensity of TiO2/CuInS2 photo-electrodes had been obviously quenched with the as-prepared CuxS/GO composite hole transport layer, which had exhibited excellent charge separation properties of the solar cells. Due to the reduce of charge recombination traps under CuxS/GO composite hole transport layer, the charge transfer efficiency of the solar cells had been effectively improved. As a result, the higher V-oc, FF and J(sc) value can be obtained for TiO2/CuInS2 quantum dot sensitized solar cells with this CuxS/GO composite hole transport layer, which had exhibited the photovoltaic conversion efficiency enhancement from 4.85% to 6.07%.
引用
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页数：5
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